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The following is from an article taken from Digitimes.com
Following a memorandum of understanding (MOU) in March, Taiwan-based Winbond Electronics announced on May 2 the signing of a definitive agreement to license 11-nanometer DRAM technology from Infineon Technologies.
The contract, signed by Winbond president C.C. Chang and Infineon general manager of memory products Harald Eggers, states that Winbond will manufacture commodity DRAM for Infineon using 0.11-micron processing, Winbond said in a statement. Infineon will begin transferring technology to Winbonds 8-inch facilities in Hsinchu in May, while installation of key 0.11-micron technology equipment will begin in the fourth quarter. Pilot wafer production is scheduled for January 2003, the statement said.
The two companies expect to reach 0.11-micron volume production within a year, by May 2003, Winbond reported. In the interim, Winbond will send its engineers to Infineon in Germany for training, while Infineon engineers will provide initial manufacturing support at Winbonds plant in Taiwan, said the Taiwan DRAM maker.
This cooperation between Infineon and Winbond comes just after the signing of a non-binding MOU between Infineon and Taiwan-based memory maker Nanya Technology. Infineon is plowing ahead with expansion plans in the wake of the cancelled deal between rivals Micron Technology and Hynix Semiconductor.
The following is from an article taken from Digitimes.com
Following a memorandum of understanding (MOU) in March, Taiwan-based Winbond Electronics announced on May 2 the signing of a definitive agreement to license 11-nanometer DRAM technology from Infineon Technologies.
The contract, signed by Winbond president C.C. Chang and Infineon general manager of memory products Harald Eggers, states that Winbond will manufacture commodity DRAM for Infineon using 0.11-micron processing, Winbond said in a statement. Infineon will begin transferring technology to Winbonds 8-inch facilities in Hsinchu in May, while installation of key 0.11-micron technology equipment will begin in the fourth quarter. Pilot wafer production is scheduled for January 2003, the statement said.
The two companies expect to reach 0.11-micron volume production within a year, by May 2003, Winbond reported. In the interim, Winbond will send its engineers to Infineon in Germany for training, while Infineon engineers will provide initial manufacturing support at Winbonds plant in Taiwan, said the Taiwan DRAM maker.
This cooperation between Infineon and Winbond comes just after the signing of a non-binding MOU between Infineon and Taiwan-based memory maker Nanya Technology. Infineon is plowing ahead with expansion plans in the wake of the cancelled deal between rivals Micron Technology and Hynix Semiconductor.